| PART |
Description |
Maker |
| MS58128J-45 MS58128J-55 UT68128LF-100 UT68128LF-15 |
IC 8MEG FLSH (512KX16) BOTTOM
IC 8MEG FLSH (512KX16) TOP SE
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 90ns 48TSOP
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 70ns 48TSOP x8的SRAM
x8 SRAM x8的SRAM
|
Intel, Corp.
|
| AT49BV8192A-11CI |
EEPROM|FLASH|512KX16/1MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Air Cost Control
|
| KM29V64000TS |
8M X 8 BIT NAND FLSH MEMORY
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S |
16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| KM23C8100DET KM23C8100ET |
8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23V8105D KM23V8105DG KM23V8105G |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BS616LV8013 |
Asynchronous 8M(512Kx16) bits Static RAM
From old datasheet system
|
BSI
|
| 1N4007 1N4004 1N4022 1N4003 |
IC, 8MBIT FLASH, 1MX8/512KX16, 3.3V, TSOP48
1.0 Ampere General Purpose Rectifiers
|
Fairchild Semiconductor Corporation
|
| LH28F800BGHE |
IC,EEPROM,NOR FLASH,512KX16,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
|
sharp
|
| ACT-SF2816N-39F18C ACT-SF2816N-39F18I ACT-SF2816N- |
ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module
|
http://
|
| N08M163WL1AD-70I N08M163WL1A N08M163WL1AB N08M163W |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| IS42S16800B IS42S16800B-6T IS42S81600B-6T IS42S168 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc.
|
